64k x 8 reprogrammable prom cy7c286 cypress semiconductor corporation ? 3901 north first street ? san jose ? ca 95134 ? 408-943-2600 november 1988 - revised au g ust 1994 features ? cmos for optimum speed/power ? windowed for reprogrammability ? high speed t aa = 45 ns ? low power 120 ma active 40 ma standby ? eprom technology, 100%programmable ? 5v 10% v cc , commercial and military ? ttl-compatible i/o ? capable of withstanding >2001v static discharge functional description the cy7c286 is a high-performance 64k x 8 cmos prom. the cy7c286 is configured in the jedec-standard 512k eprom pinout and is available in a 28-pin, 600-mil package and a 32-pin plcc package. power consumption is 120 ma in the active mode and 40 ma in the standby mode. access time is 45 ns. the cy7c286 is available in a cerdip package equipped with an erasure window to provide reprogrammability. when ex- posed to uv light, the prom is erased and can be repro- grammed. the memory cells utilize proven eprom float- ing-gate technology and byte-wide intelligent programming algorithms. the cy7c286 offers the advantage of low power, superior per- formance, and programming yield. the eprom cell requires only 12.5v for the supervoltage and low current requirements allow for gang programming. the eprom cells allow for each memory location to be 100% tested with each cell being pro- grammed, erased, and repeatedly exercised prior to encapsu- lation. each prom is also tested for ac performance to guar- antee that the product will meet dc and ac specification limits after customer programming. reading the cy7c286 is accomplished by placing active low signals on the oe and ce pins. the contents of the memory location addressed by the address lines (a 0 C a 15 ) will become available on the output lines (o 0 C o 7 ). for a 64k x 8 prom with registered outputs, see the cy7c287. logic block diagram pin configurations c286C1 1 2 3 4 5 6 7 8 9 10 11 12 16 17 18 19 20 24 23 22 21 13 14 25 28 27 26 top view dip a 15 a 12 a 7 a 6 a 5 a 4 a 3 a 2 a 1 a 0 o 0 o 1 o 2 gnd v cc a 14 a 13 a 8 a 9 a 11 oe a 10 ce o 7 o 6 o 4 o 5 o 3 c286C2 12 o 0 31 4 5 6 7 8 9 10 32 1 30 13 14151617 26 25 24 23 22 21 11 a 7 v cc a 6 a 5 a 4 a 3 a 2 a 1 a 0 ce a 9 a 11 nc a 10 o 7 o 6 o 5 gnd top view lcc/plcc a 8 oe a 12 o 4 o 2 o 1 181920 27 28 29 32 nc 15 7c286 7c286 c286C3 o 3 a 15 a 14 a 13 nc nc o 7 o 6 o 5 o 4 o 3 o 2 o 1 o 0 a 15 a 14 a 13 a 12 a 11 a 10 a 9 a 8 8x1of128 multi- plexer a 7 a 6 a 5 a 4 a 3 a 2 a 1 a 0 ce oe 512 x 1024 program- mable array power-down x y row address column address address decoder
cy7c286 2 maximum ratings (above which the useful life may be impaired. for user guide- lines, not tested.) storage temperature .................................C65 c to +150 c ambient temperature with power applied .............................................C55 c to +125 c supply voltage to ground potential ............... C0.5v to +7.0v dc voltage applied to outputs in high z state ............................................... C0.5v to +7.0v dc input voltage ............................................ C3.0v to +7.0v dc program voltage .....................................................13.0v uv exposure ................................................ 7258 wsec/cm 2 static discharge voltage ........................................... >2001v (per milCstdC883, method 3015.2) latch-up current..................................................... >200 ma selection guide 7c286C45 7c286C50 7c286C60 7c286C70 7c286C80 maximum access time (ns) 45 50 60 70 80 maximum operating current (ma) coml 120 120 120 90 mil 150 120 120 maximum standby current (ma) coml 40 40 40 30 mil 50 40 40 operating range range ambient temperature v cc commercial 0 c to +70 c 5v 10% industrial [1] C40 c to +85 c 5v 10% military [2] C55 c to +125 c 5v 10% electrical characteristics over the operating range [3, 4] parameter 7c286C45, 50 7c286C60 7c286C70, 80 unit description test conditions min. max. min. max. min. max. v oh output high voltage v cc = min., i oh = C2.0 ma 2.4 2.4 2.4 v v ol output low voltage v cc = min., i ol = 8.0 ma coml 0.4 0.4 0.4 v v cc = min., i ol = 6.0 ma mil 0.4 0.4 v ih input high voltage guaranteed input logical high voltage for inputs 2.0 v cc 2.0 v cc 2.0 v cc v v il input low voltage guaranteed input logical low voltage for inputs 0.8 0.8 0.8 v i ix input load current gnd < v in < v cc C10 +10 C10 +10 C10 +10 m a v cd input diode clamp voltage note 4 i oz output leakage current gnd < v out < v cc , output disabled C40 +40 C40 +40 C40 +40 m a i os output short circuit current v cc = max., v out = gnd [5] C20 C90 C20 C90 C20 C90 ma i cc v cc operating supply current v cc = max., i out = 0 ma coml 120 120 90 ma mil 150 120 i sb standby supply current v cc = max., ce = high coml 40 40 30 ma mil 50 40 v pp programming supply voltage 12 13 12 13 12 13 v i pp programming supply current 50 50 50 ma v ihp input high programming voltage 3.0 3.0 3.0 v v ilp input low programming voltage 0.4 0.4 0.4 v
cy7c286 3 notes: 1. contact a cypress representative for industrial temperature range specifications. 2. t a is the instant on case temperature. 3. see the last page of this specification for group a subgroup testing information. 4. see introduction to cmos proms for general information on testing. 5. short circuit test should not exceed 30 seconds. electrical characteristics over the operating range [3, 4] parameter 7c286C45, 50 7c286C60 7c286C70, 80 unit description test conditions min. max. min. max. min. max. capacitance [4] parameter description test conditions max. unit c in input capacitance t a = 25 c, f = 1 mhz, v cc = 5.0v 10 pf c out output capacitance 10 pf ac test loads and waveform [4] 3.0v 5v output r1 500 w r2 333 w 30 pf including jig and scope gnd 90% 10% 90% 10% 5ns 5 ns 5v output r1 500 w r2 333 w 5pf including jig and scope (a) normalload (b) high z load output 2.0v equivalent to: th venin equivalent c286C4 c286C5 all input pulses (658 w mil) (403 w mil) (403 w mil) output 1.9v commercial military c286C6 (658 w mil) c286C7 200 w 250 w switching characteristics over the operating range [3,4 ] parameter 7c286C45 7c286C50 7c286C60 7c286C70 7c286C80 description min. max. min. max. min. max. min. max. min. max. unit t aa address access time 45 50 60 70 80 ns t ce output valid from ce 45 50 60 70 80 ns t oe output valid from oe 15 18 20 25 25 ns t df output three-state from ce /oe 15 18 20 25 25 ns t pu chip enable to power-up 0 0 0 0 0 ns t pd chip disable to power-down 40 40 50 60 60 ns
cy7c286 4 erasure characteristics wavelengths of light less than 4000 angstroms begin to erase the 7c286 in the windowed package. for this reason, an opaque label should be placed over the window if the prom is exposed to sunlight or fluorescent lighting for extended pe- riods of time. the recommended dose of ultraviolet light for erasure is a wavelength of 2537 angstroms for a minimum dose (uv inten- sity multiplied by exposure time) of 25 wsec/cm 2 . for an ultra- violet lamp with a 12 mw/cm 2 power rating, the exposure time would be approximately 35 minutes. the cy7c286 needs to be within 1 inch of the lamp during erasure. permanent dam- age may result if the prom is exposed to high-intensity uv light for an extended period of time. 7258 wsec/cm 2 is the recommended maximum dosage. programming modes programming support is available from cypress as well as from a number of third-party software vendors. for detailed programming information, including a listing of software pack- ages, please see the prom programming information located at the end of this section. programming algorithms can be ob- tained from any cypress representative. switching waveform t aa t ce t df high z valid va li d t oe t df ce a 0 Ca 15 o 0 Co 7 oe c286C8 table 1. cy7c286 mode selection. mode: read or output disable pin [6] pgm latch vfy v pp d 0 C d 7 a 10 a 11 ce oe o 7 C o 0 read a 10 a 11 v il v il o 7 C o 0 output disable a 10 a 11 x v ih high z output disable & power down a 10 a 11 v ih x high z mode: other pgm latch vfy v pp d 7 C d 0 program v ilp v ilp v ihp v pp d 7 C d 0 program verify v ihp v ilp v ilp v pp o 7 C o 0 program inhibit v ihp v ilp v ihp v pp high z blank check v ihp v ilp v ilp v pp zeros note: 6. x can be v il or v ih .
cy7c286 5 figure 1. programming pinouts. vfy pgm 1 2 3 4 5 6 7 8 9 10 11 12 16 17 18 19 20 24 23 22 21 13 14 25 28 27 26 a 12 a 7 a 6 a 5 a 4 a 3 a 2 a 1 a 0 d 0 d 1 d 2 gnd v cc a 13 a 8 /a 11 a 9 /a 10 d 7 d 6 d 4 d 5 d 3 c286C9 c286C10 12 d 0 31 4 5 6 7 8 9 10 32 1 30 13 14151617 26 25 24 23 22 21 11 a v cc a 5 a 4 a 3 a 2 a 1 a 0 a 9 /a 10 d 7 d 6 d 4 gnd a 8 /a 11 a a d 3 d 1 181920 27 28 29 32 nc d 5 15 a 15 a 14 latch v pp a 14 a 13 pgm v pp vfy nc 7c286 dip lcc/plcc 7c286 nc 7 12 15 nc a 6 d 2 latch ordering information [7] speed (ns) ordering code package name package type operating range 45 cy7c286C45jc j65 32-lead plastic leaded chip carrier commercial cy7c286C45pc p15 28-lead (600-mil) molded dip cy7c286C45wc w16 28-lead (600-mil) windowed cerdip 50 cy7c286C50jc j65 32-lead plastic leaded chip carrier commercial cy7c286C50pc p15 28-lead (600-mil) molded dip cy7c286C50wc w16 28-lead (600-mil) windowed cerdip 60 cy7c286C60jc j65 32-lead plastic leaded chip carrier commercial cy7c286C60pc p15 28-lead (600-mil) molded dip cy7c286C60wc w16 28-lead (600-mil) windowed cerdip cy7c286C60dmb d16 28-lead (600-mil) cerdip military cy7c286C60lmb l55 32-pin rectangular leadless chip carrier cy7c286C60qmb q55 32-pin windowed rectangular leadless chip carrier cy7c286C60wmb w16 28-lead (600-mil) windowed cerdip 70 cy7c286C70jc j65 32-lead plastic leaded chip carrier commercial cy7c286C70pc p15 28-lead (600-mil) molded dip cy7c286C70wc w16 28-lead (600-mil) windowed cerdip cy7c286C70dmb d16 28-lead (600-mil) cerdip military cy7c286C70lmb l55 32-pin rectangular leadless chip carrier cy7c286C70qmb q55 32-pin windowed rectangular leadless chip carrier cy7c286C70wmb w16 28-lead (600-mil) windowed cerdip 80 cy7c286C80wmb w16 28-lead (600-mil) windowed cerdip military cy7c286C80qmb q55 32-pin windowed rectangular leadless chip carrier notes: 7. most of these products are available in industrial temperature range. contact a cypress representative for specifications an d product availability.
cy7c286 6 military specifications group a subgroup testing document #: 38C00103Ch dc characteristics parameter subgroups v oh 1, 2, 3 v ol 1, 2, 3 v ih 1, 2, 3 v il 1, 2, 3 i ix 1, 2, 3 i oz 1, 2, 3 i cc 1, 2, 3 i sb 1, 2, 3 switching characteristics parameter subgroups t aa 7, 8, 9, 10, 11 t ce 7, 8, 9, 10, 11 t oe 7, 8, 9, 10, 11 package diagrams 28-lead (600-mil) cerdip d16 milCstdC1835 dC 10 config.a 32-lead plastic leaded chip carrier j65
cy7c286 ? cypress semiconductor corporation, 1994. the information contained herein is subject to change without notice. cypress semico nductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress semiconductor product. nor does it convey or imply any license unde r patent or other rights. cypress semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected t o result in significant injury to the user. the inclusion of cypress semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in do ing so indemnifies cypress semiconductor against all charges. package diagrams (continued) 32-pin rectangular leadless chip carrier l55 milCstdC1835 cC12 32-pin windowed rectangular leadless chip carrier q55 milCstdC1835 cC12 28-lead (600-mil) molded dip p15
cy7c286 8 package diagrams (continued) 28-lead (600-mil) windowed cerdip w16 milCstdC1835 dC 10 config.a
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